Comparative study of annealing and oxidation effects in a-SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering
Comparative study of annealing and oxidation effects in a-SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering
复制标题
DOI:
10.1016/j.tsf.2010.11.005
复制
发表时间:
2011-01
期刊:
影响因子:
2.1
通讯作者:
A. Vasin;S. Muto;Y. Ishikawa;A. Rusavsky;Tomohiko Kimura;V. Lysenko;A. Nazarov
中科院分区:
文献类型:
--
作者:
A. Vasin;S. Muto;Y. Ishikawa;A. Rusavsky;Tomohiko Kimura;V. Lysenko;A. Nazarov