Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
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DOI：
10.1149/1.2129570
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发表时间：
1980-12
影响因子：
3.9
通讯作者：
S. Nishino;Y. Hazuki;H. Matsunami;Tetsuro Tanaka
中科院分区：
文献类型：
--
作者：
S. Nishino;Y. Hazuki;H. Matsunami;Tetsuro Tanaka
采用SiH4-C3Hs-H2系统，用化学气相沉积的方法在带有溅射层的硅衬底上生长了E-SiC单晶。经反射电子衍射仪和X射线衍射仪检测，证实生长层为单晶，厚度为4#m。为了减少E-SIC与硅衬底之间的大失配，采用溅射/3-SIC层作为缓冲层。即使溅射层是多晶层，CVD沉积的后续层也是单晶层。溅射层的厚度、溅射过程中的衬底温度和化学气相沉积的温度对沉积层的结晶度有很大的影响。碳化硅具有较高的温度稳定性和较大的能隙，是一种有趣的电子和光学应用材料。立方结构的z-碳化硅在室温下禁带宽度为2.35 eV(1)，电子迁移率为1000 cm~2/V·s(2)，漂移速度为2.7·10T cm/s(2·105V/cm)(3)。这些特性对于少数载流子以及多数载流子器件应用特别有吸引力。然而，由于晶体生长的困难，无法获得大面积的衬底。升华法(LEY法)制备的z-SiCe晶体尺寸小，形状不规则，使器件制造中的晶片加工变得复杂。为了
A single crystal of E-SiC was grown by chemical vapor deposition using an SiH4-C3Hs-H2 system on a silicon substrate with a sputtered layer. The grown layer of 4# m thickness was confirmed as a single crystal by examination with reflection electron diffraction and x-ray diffraction. To reduce the large mismatch between E-SiC and a silicon substrate, a sputtered/3-SIC layer was employed as a buffer layer. Even though the sputtered layer was polycrystalline, the subsequent layer deposited by CVD was a single crystal. The crystal~ inity of the deposited layer was strongly affected by the thickness of the sputtered layer, the substrate temperature during sputtering, and the temperature of chemical vapor deposition.Silicon carbide (SIC) is an interesting material for electronic and optical device applications because of its high temperature stability and large energy gap. The cubic form, z-SiC, has a bandgap energy of 2.35 eV (1) at room temperature, an electron mobility of 1000 cm2/V. sec (2), and a drift velocity of 2.7• l0 T cm/sec (at 2• 105 V/cm)(3). These properties are particularly attractive for minority carrier as well as majority carrier device applications. However, a large area substrate is not available because of the difficulty of crystal growth. Crystals of z-SiC obtained by a sublimation process (Lely method) have small size and irregular shapes, thus complicating wafer processing for device fabrication. In order to