A Novel 700-V SOI LDMOS With Double-Sided Trench
A Novel 700-V SOI LDMOS With Double-Sided Trench
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DOI：
10.1109/led.2007.894648
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发表时间：
2007-04
影响因子：
4.9
通讯作者：
X. Luo;Bo Zhang;Zhaoji Li;Yufeng Guo;Xinwei Tang;Yong Liu
中科院分区：
文献类型：
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作者：
X. Luo;Bo Zhang;Zhaoji Li;Yufeng Guo;Xinwei Tang;Yong Liu
提出了一种新型的埋氧层上双面沟槽SOI高压器件结构，并对其击穿特性进行了理论和实验研究。理论上，由于掺杂在DT中的电荷密度随漏极电压的变化而变化，从而增加了埋层中的电场，并调制了漂移区中的电场，从而提高了器件的击穿电压（BV）。在实验上，首次在20 μ m SOI层和1 μ m埋氧层上使用DT的SOI LDMOS中获得了730 V的BV
A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mum SOI layer and 1- mum buried oxide layer