Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers
Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers
复制标题
氮化硅层对 c-Si 晶圆中少数载流子扩散长度的影响
DOI：
10.1063/1.2390628
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
J. Lorincik
中科院分区：
文献类型：
--
作者：
J. Toušek;J. Toušková;A. Poruba;P. Hlídek;J. Lorincik
采用表面光电压（SPV）、傅里叶变换红外光谱（FTIR）和二次离子质谱（西姆斯）等方法，研究了微波辅助等离子体增强化学气相沉积（PECVD）和低压化学气相沉积（LPCVD）技术在p型单晶硅衬底上制备的氮化硅薄膜。硅中的有效扩散长度由SPV方法评估，并且其强烈地受沉积的SiNx层的影响。红外光谱分析表明，在该层中存在氢的化学键。在PECVD样品的光谱中发现了Si-H和N-H基团的两个吸收带以及它们在温度处理后的变化，而在LPCVD样品的光谱中只识别出N-H键。氢离子的二次离子质谱（西姆斯）谱显示了退火过程中H从PECVD氮化硅层向Si亚表面层的输运。渗透的H的积极影响体现在钝化的缺陷…
Silicon nitride layers prepared from silane and ammonia based gases by microwave assisted plasma enhanced chemical vapor deposition (PECVD) and by low pressure chemical vapor deposition (LPCVD) techniques on p-type c-silicon substrates were studied via the methods of surface photovoltage (SPV), Fourier transform infrared (FTIR), and secondary-ion-mass spectroscopy (SIMS). The effective diffusion length in silicon was evaluated by the SPV method, and it was strongly influenced by the deposited SiNx layer. The FTIR spectra show the form of chemical bond of hydrogen in the layer. Two absorption bands belonging to Si–H and N–H groups and their modification after temperature treatment were found in the spectra of PECVD samples, while in the spectra of LPCVD samples only N–H bonds were recognized. Transport of H from PECVD silicon nitride into Si subsurface layer during the annealing process is shown by SIMS profiles of hydrogen. Positive influence of the penetrated H manifests in passivation of defects in the ...