Doping Single-Layer Graphene with Aromatic Molecules
Doping Single-Layer Graphene with Aromatic Molecules
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DOI：
10.1002/smll.200801711
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发表时间：
2009-06-19
期刊：
影响因子：
13.3
通讯作者：
Li, Lain-Jong
中科院分区：
文献类型：
--
作者：
Dong, Xiaochen;Fu, Dongliang;Li, Lain-Jong
研究了机械利用高取向热解石墨(HOPG)制备单层石墨烯(SLG)薄膜，并用不同的芳香族分子对其进行修饰。研究发现，这些分子通过芳环与石墨烯之间的强π-π相互作用与薄膜结合。对SLG基场效应晶体管的电学测量表明，带有给电子基团的芳香族分子导致了n掺杂，而带有吸电子基团的芳香族分子则对SLG施加了p掺杂。用拉曼光谱表征了这些芳香族分子的掺杂效果。ITV表明，SLG薄膜上的电荷杂质或撕裂有可能导致不均匀的电荷分布，从而导致拉曼特征的变化。
A study was conducted to demonstrate the preparation of single-layer graphene (SLG) films through mechanical exploitation of highly oriented pyrolytic graphite (HOPG) and modify them with various aromatic molecules. It was found that the molecules bound to SLG films through strong π-π interactions between their aromatic rings and the graphene. Electrical measurements on SLG-based field-effect transistors revealed that the aromatic molecules with electron-donating groups caused n-doping, while those with electron-withdrawing groups imposed p-doping on the SLG. The doping effect by these aromatic molecules were characterized by Raman spectroscopy. Itv was suggested that the charge impurity or ripping on the SLG film had the potential to cause an inhomogeneous charge distribution that led to variations of Raman features.