Active-edge planar radiation sensors
Active-edge planar radiation sensors
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DOI：
10.1016/j.nima.2006.05.012
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发表时间：
2006-09-01
影响因子：
1.4
通讯作者：
Morse, J.
中科院分区：
文献类型：
--
作者：
Kenney, C. J.;Segal, J. D.;Morse, J.
医学、生物学、高能物理和天体物理学中的许多系统都需要大面积的辐射传感器。在大多数这样的应用中，最大限度地减少死区或死材料的数量是至关重要的。我们已经开发了一种新型的硅辐射传感器，在这种传感器中，器件在机械边缘几微米范围内有效。他们的周边是由等离子蚀刻机而不是钻石锯制成的。它们的边缘可以通过在中间步骤中在侧表面上生长场氧化物来限定和钝化。本文介绍了该系统的基本结构和同步加速器束流测试结果。(C)2006年，爱思唯尔出版。
Many systems in medicine, biology, high-energy physics, and astrophysics require large area radiation sensors. In most of these applications, minimizing the amount of dead area or dead material is crucial. We have developed a new type of silicon radiation sensor in which the device is active to within a few microns of the mechanical edge. Their perimeter is made by a plasma etcher rather than a diamond saw. Their edges can be defined and also passivated by growing, in an intermediate step, a field oxide on the side surfaces. In this paper, the basic architecture and results from a synchrotron beam test are presented. (c) 2006 Published by Elsevier B.V.