Si(111)Electrode/Electrolyte Interfacial Studied by in-situ Second Harmonic Generation
Si(111)Electrode/Electrolyte Interfacial Studied by in-situ Second Harmonic Generation
复制标题
原位二次谐波产生研究 Si(111) 电极/电解质界面
DOI：
10.1063/1674-0068/cjcp2007129
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发表时间：
2020
影响因子：
1
通讯作者：
Zhang Zhen
中科院分区：
文献类型：
--
作者：
Liu Caihe;Bai Ruipeng;Bai Yu;Guo Yuan;Zhang Zhen
Si(111)电极在电化学和光电化学研究中有着广泛的应用。为了研究Si(111)电极的界面，采用了电位依赖的二次谐波产生(SHG)测量方法。在不同的Si(111)方位角和不同的极化组合下，定量分析表明，这种电位依赖关系的差异可以用Si(111)电极的各向同性和各向异性贡献来解释，而Si(111)电极各向同性和各向异性贡献的变化可能归因于Si(111)电极掺杂浓度的增加。
Si(111)electrode has been widely used in electrochemical and photoelectrochemical studies.The potential dependent measurements of the second harmonic generation (SHG)were performed to study Si(111)electrode interface.At different azimuthal angles of the Si(111)and under different polarization combinations, the curve of the intensity of SHG with extern potential has a different form of line or parabola.Quantitative analysis showed that these differences in the potential-dependence can be explained by the isotropic and anisotropic contribution of the Si(111)electrode.The change in the isotropic and anisotropic contribution of the Si(111)electrode may be attributed to the increase in the doping concentration of Si(111)electrodes.