High Electric Field Transport In (TMTSF)2 Pf6 [Bis-Tetramethyltetraselenafulvalene Hexafluorophosphate] at Low Temperatures
High Electric Field Transport In (TMTSF)2 Pf6 [Bis-Tetramethyltetraselenafulvalene Hexafluorophosphate] at Low Temperatures
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(TMTSF)2 Pf6 [双-四甲基四硒富瓦烯六氟磷酸盐] 低温下的高电场输运
DOI：
10.1080/00268948208070992
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发表时间：
1982
影响因子：
0.7
通讯作者：
N. Banik
中科院分区：
文献类型：
--
作者：
E. Conwell;N. Banik
摘要通过测量（TMTSF） 2pf6的霍尔迁移率，得到了电子和空穴的迁移率。在4K时，这些值大于106cm2/Vsec，并且与声子散射的迁移率计算一致。在低温下，这种材料在直流场中电导率的初始增加可以用单粒子效应来解释，特别是电场对载流子的加热。为了解释进一步的增长，我们认为差距在空间上是不均匀的。这可以用错位来解释。
Abstract We obtain electron and hole mobilities from the measured Hall mobility of (TMTSF)2 PF6. At 4K these are greater than 106cm2/Vsec and agree with the mobility calculated for acoustic phonon scattering. The initial increase of conductivity in dc fields found at low temperatures in this material can be accounted for by single particle effects, specifically heating of the carriers by the field. To explain further increases we suggest that the gap is spatially nonuniform. This could be accounted for by dislocations.