Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
复制标题
DOI：
10.1063/1.4985297
复制
发表时间：
2017-06-05
影响因子：
4
通讯作者：
Nishida, Toshikazu
中科院分区：
文献类型：
--
作者：
Lomenzo, Patrick D.;Chung, Ching-Chang;Nishida, Toshikazu
铁电铌-锆氧化物薄膜系统的出现可能为集成能量存储和脉冲功率器件的应用提供了机会。为了探索这种材料薄膜系统的边界，10 nm厚的二元Hf0.5Zr0.5O2（HZO）薄膜掺杂有Al或Si（Al或Si掺杂的HZO）。添加的掺杂剂提供了从铁电特性到反铁电特性的明显转变。Si掺杂的Hf0.5Zr0.5O2薄膜具有大于50 J/cm（3）的储能密度和80%以上的储能效率。Si掺杂的Hf0.5Zr0.5O2薄膜在高达125 ℃下循环10 9次，并保持稳定的35 J/cm（3）能量存储密度和大于80%的效率。Al掺杂的Hf0.5Zr0.5O2薄膜表现出更大的开关场，导致更小的能量存储密度和更少的稳健循环性能比Si掺杂的Hf0.5Zr0.5O2。出版社：AIP Publishing
Applications for integrated energy storage and pulse-power devices may have found opportunities in the emergence of the ferroelectric hafnium-zirconium oxide thin film system. To explore the boundaries of this material thin film system, 10 nm thick binary Hf0.5Zr0.5O2 (HZO) thin films are doped with Al or Si (Al or Si-doped HZO). The added dopants provide a distinct shift in behavior from ferroelectric to antiferroelectric characteristics. Si-doped Hf0.5Zr0.5O2 thin films exhibited a larger than 50 J/cm(3) energy storage density with an efficiency of over 80%. The Si-doped Hf0.5Zr0.5O2 thin films were cycled 10 9 times up to 125 degrees C and maintained a robust 35 J/cm(3) energy storage density and greater than 80% efficiency. Al-doped Hf0.5Zr0.5O2 thin films exhibited a larger switching field, leading to a smaller energy storage density and less robust cycling properties than Si-doped Hf0.5Zr0.5O2. Published by AIP Publishing.