Fabrication of SiO2/Si/SiO2 Double Barrier Diodes using Two-Dimensional Si Structures
Fabrication of SiO2/Si/SiO2 Double Barrier Diodes using Two-Dimensional Si Structures
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利用二维硅结构制造 SiO2/Si/SiO2 双势垒二极管
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
Kenji Kurihara Kenji Kurihara
中科院分区：
文献类型：
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作者：
H. Namatsu;S. Horiguchi;Yasuo Takahashi;Masao Nagase Masao Nagase;Kenji Kurihara Kenji Kurihara
在这篇文章中，我们展示了一种技术，用于制造SiO2/二维（2D）-Si/SiO2双势垒二极管，并讨论其特性。通过使用碱性水溶液对{110} Si进行取向相关的蚀刻，形成具有{111}侧面的垂直2D-Si。用NH_4F/H_2O_2溶液将二维硅的线宽减小到纳米量级。该溶液还去除了由碱性水溶液蚀刻的Si平面上产生的残留物。使用一个巧妙的安排的虚拟图案和回蚀技术，多晶硅电极成功地形成没有任何光刻对准。通过该工艺制造的SiO2/2D-Si/SiO2二极管显示出与计算值一致的谐振特性。
In this article, we demonstrate a technique for fabricating SiO2/two-dimensional (2D)-Si/SiO2 double barrier diodes and discuss their characteristics. Vertical 2D-Si with {111} side planes is formed by orientation-dependent etching of {110} Si using aqueous alkaline solution. The linewidth of the 2D-Si is reduced to nanometer order with NH4F/H2O2 solution. This solution also removes the residue generated on Si planes etched by aqueous alkaline solution. Using a skillful arrangement of dummy patterns and an etchback technique, poly-Si electrodes are successfully formed without any lithographic alignments. A SiO2/2D-Si/SiO2 diode fabricated by this process shows resonant characteristics that are in agreement with the calculated values.