On the upper limit of content in tetrahedral amorphous carbon film
On the upper limit of content in tetrahedral amorphous carbon film
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DOI：
10.1088/0953-8984/11/1/015
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发表时间：
1999-01
期刊：
影响因子：
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通讯作者：
Xihang Shi;L. K. Cheah;J. R. Shi;Zhili Sun;B. Tay
中科院分区：
文献类型：
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作者：
Xihang Shi;L. K. Cheah;J. R. Shi;Zhili Sun;B. Tay
在碳离子能量为15 ~ 200 eV范围内，研究了过滤阴极真空弧（FCVA）技术沉积的四面体非晶碳（ta-C）薄膜的形貌特征。所研究的所有薄膜都非常光滑，粗糙度低于0.6 nm。最小粗糙度（nm）出现在最高含量处。横向特征尺寸随着离子能量而增加。在峰含量之前和之后似乎存在两种不同的生长机制。形貌分析结果表明，FCVA法制备的ta-C薄膜中ta-C含量的上限约为89%。
The morphological properties of the tetrahedral amorphous carbon (ta-C) films deposited by the filtered cathodic vacuum arc (FCVA) technique have been studied over the carbon ion energy range 15 to 200 eV. All the films studied are very smooth with a roughness below 0.6 nm. The minimum roughness ( nm) occurs at the highest content. The lateral feature size increases with ion energy. There appear to be two different growth mechanisms before and after the peak content. The morphological result suggests an upper limit content of about 89% in the ta-C films deposited by FCVA technique.