Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN
Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN
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DOI：
10.1063/1.2971027
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发表时间：
2008-08
影响因子：
4
通讯作者：
H. Schenk;M. Nemoz;M. Korytov;P. Vennégués;A. D. Dräger;A. Hangleiter
中科院分区：
文献类型：
--
作者：
H. Schenk;M. Nemoz;M. Korytov;P. Vennégués;A. D. Dräger;A. Hangleiter
Al1-xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750–810 °C. A thermally activated process with activation energy of 1.05±0.05eV is found to compete with indium incorporated. Smooth epitaxial layers with root mean-squares surface roughness of 0.3–0.8nm are获得的（Al，In）n膜与GAN相匹配，已被引入激光二极管结构以进行光学限制。
Al1−xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750–810 °C. A thermally activated process with activation energy of 1.05±0.05eV is found to compete with indium incorporation. Smooth epitaxial layers with root mean-squares surface roughness of 0.3–0.8nm are obtained. (Al,In)N films lattice matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed.