Ab Initio Study of Donor–Hydrogen Complexes for Low-Resistivity n-Type Diamond Semiconductor
Ab Initio Study of Donor–Hydrogen Complexes for Low-Resistivity n-Type Diamond Semiconductor
复制标题
低电阻率 n 型金刚石半导体的供体氢配合物的从头算研究
DOI:
10.1143/jjap.41.1952
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发表时间:
2002
影响因子:
1.5
通讯作者:
N. Orita
中科院分区:
文献类型:
--
作者:
T. Nishimatsu;H. Katayama‐Yoshida;N. Orita
We performed local density approximation (LDA)-based ab initio calculations for isolated substitutional donor impurities (phosphorus single donor and sulfur double donor), hydrogen at various sites, and hydrogen-related complexes (phosphorus-hydrogen and sulfur-hydrogen) in diamond. Their stable atomic configurations and electronic structures were determined. The two donor impurities exhibit Jahn–Teller distortions, reducing their symmetries from Td to C3v. We found that the bond center site is the most stable site for hydrogen (and muonium) in diamond, and the tetrahedral interstitial site, the hexagonal interstitial site, and the antibonding site are metastable sites. This result is consistent with those of muon-spin-rotation (µSR) experiments. We also found that hydrogen passivates phosphorus donor. We propose a bonding model for the sulfur–hydrogen complex which produces a shallower single-donor level (1.07 eV below the bottom of the conduction band) than the isolated sulfur double-donor (1.63 eV). Frequencies of infrared active hydrogen vibration which will be observed by infrared absorption measurements and the cohesive energy of each complex was predicted. Finally, we propose a new doping method for the fabrication of low-resistivity n-type diamond.