New technique for measuring small MOS gate currents
New technique for measuring small MOS gate currents
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测量小 MOS 栅极电流的新技术
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
A. Pavlin
中科院分区：
文献类型：
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作者：
M. Garrigues;A. Pavlin
提出了一种在噪声环境中测量MOSFET器件小栅电流的新技术。混合技术是用来建立一个双栅极FAMOS型设备使用两个传统的MOSFET器件的等效。作为一个例子，给出了衬底热电子流的测量。
A new technique is presented for the measurement of small gate currents on MOSFET devices in noisy environments. Hybrid technology is used to build the equivalent of a double-gate FAMOS-type device using two conventional MOSFET devices. Measurements of substrate hot-electron currents are given as an example.