Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al∕MgO∕Co50Fe50 magnetic tunnel junctions with exchange biasing
Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al∕MgO∕Co50Fe50 magnetic tunnel junctions with exchange biasing
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DOI：
10.1063/1.2428412
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发表时间：
2007
影响因子：
4
通讯作者：
T. Marukame
中科院分区：
文献类型：
--
作者：
T. Marukame
采用全Heusler合金Co2Cr0.6Fe0.4Al（CCFA）薄膜和MgO隧道势垒制备了具有交换偏置的全外延磁性隧道结（MTJ），其中Co50Fe50上电极用于合成亚铁磁性Co50Fe50 scinRu scinCo90Fe10三层结构，通过Co90Fe10 scinIrMn界面与IrMn层交换偏置.所制备的MTJ表现出明显的交换偏置隧道磁电阻（TMR）特性，室温下的TMR值为109%，4.2K时的TMR值为317%。在4.2K下，具有B2结构的CCFA外延膜的隧穿自旋极化率估计为0.88。
Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50∕Ru∕Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10∕IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2K. A high tunneling spin polarization of 0.88 at 4.2K was estimated for epitaxial CCFA films with the B2 structure.