Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes
Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes
复制标题
Al/sub 0.8/Ga/sub 0.2/As雪崩光电二极管的过量噪声特性
DOI：
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发表时间：
2002
影响因子：
2.6
通讯作者：
G. Rees
中科院分区：
文献类型：
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作者：
B. K. Ng;J. David;R. C. Tozer;M. Hopkinson;G. Hill;G. Rees
本文测量了Al/sub 0.8/Ga/sub 0.2/As的雪崩噪声特性，测量了i区宽度/spl Ω/从1.02到0.02 /spl μ/m的p-i-n和n-i-p二极管。虽然厚体二极管由于大的/spl α/spl β/比（1/k）而表现出来自电子引发的倍增的低的过量噪声，但是发现具有/spl ω/ < 0.31 /spl μ/m的二极管的过量噪声由于死空间的效应而大大降低。最薄的二极管表现出非常低的过量噪声，对应于k = 0.08，高达90的倍增值。与大多数III-V族材料相反，发现厚和薄的Al/sub 0.8/Ga/sub 0.2/As倍增层都可以给出非常低的过量噪声，并且电子必须启动倍增以使过量噪声最小化，即使在薄结构中也是如此。
The avalanche noise characteristics of Al/sub 0.8/Ga/sub 0.2/As have been measured in a range of p-i-n and n-i-p diodes with i-region widths /spl omega/ varying from 1.02 to 0.02 /spl mu/m. While thick bulk diodes exhibit low excess noise from electron initiated multiplication, owing to the large /spl alpha///spl beta/ ratio (1/k), the excess noise of diodes with /spl omega/ < 0.31 /spl mu/m were found to be greatly reduced by the effects of dead space. The thinnest diodes exhibit very low excess noise, corresponding to k = 0.08, up to a multiplication value of 90. In contrast to most III-V materials, it was found that both thick and thin Al/sub 0.8/Ga/sub 0.2/As multiplication layers can give very low excess noise and that electrons must initiate multiplication to minimize excess noise, even in thin structures.