Characterization of a cryogenically cooled Silicon Germanium HBT amplifier
Characterization of a cryogenically cooled Silicon Germanium HBT amplifier
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DOI：
10.1109/icmmt.2008.4540350
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发表时间：
2008-04
期刊：
影响因子：
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通讯作者：
A. Cao;K. Liu;S.H. Chen;S. Shi
中科院分区：
文献类型：
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作者：
A. Cao;K. Liu;S.H. Chen;S. Shi
本文研究了DC-6 GHz微波放大器的增益和噪声特性，该放大器采用商用硅锗异质结双极晶体管（SiGeHBT），在不同的熔池温度下工作。在室温下，两级放大器在2.62 GHz处的增益为21 dB，噪声系数为3.7 dB。当冷却到70 K时，它在相同频率下具有27 dB的增益和1.5 dB的噪声系数。另一个三级放大器在2.64 GHz处的室温增益和噪声系数分别为34.5 dB和3.7 dB。当冷却到130 K时，增益上升到37.5 dB;当冷却到170 K时，噪声系数下降到2.4 dB。当环境温度降低时，该放大器的增益和噪声系数都有所提高。
In this paper, the gain and noise performances of a DC-6 GHz microwave amplifier using commercial Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) are investigated at different bath temperatures. At room temperature, the two-stage amplifier has a gain of 21 dB and a noise figure of 3.7 dB at 2.62 GHz. When cooled to 70 K, it demonstrates 27 dB gain and 1.5 dB noise figure at the same frequency. The gain and noise figure of another three-stage amplifier at room temperature are 34.5 dB, 3.7 dB at 2.64 GHz, respectively. When cooled to 130 K, the gain goes up to 37.5 dB; when cooled to 170 K, the noise figure goes down to 2.4 dB. The higher gain and better noise figure of this amplifier are obtained when the ambient temperature decreases.