Photoluminescence spectrum of a-Si/SiO2 and c-Si/SiO2 quantum wells
Photoluminescence spectrum of a-Si/SiO2 and c-Si/SiO2 quantum wells
复制标题
a-Si/SiO2 和 c-Si/SiO2 量子阱的光致发光光谱
DOI：
10.1016/s0022-2313(99)00490-1
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发表时间：
2000
影响因子：
3.6
通讯作者：
T. Kushida
中科院分区：
文献类型：
--
作者：
Y. Kanemitsu;M. Iiboshi;T. Kushida
研究了a-Si和c-Si基量子威尔斯阱的光致发光特性。a-Si/SiO2和c-Si/SiO2量子阱威尔斯的光致发光峰能量较体硅和a-Si的光致发光峰能量蓝移。随着a-Si/SiO2量子阱威尔斯中a-Si阱厚度的减小，PL峰能量向高能量方向移动，PL寿命变短。在a-Si/SiO_2量子威尔斯阱中观察到了PL峰能量和PL寿命随阱厚的变化。激子在硅量子结构中的限制和局域化将被讨论。
We have studied photoluminescence (PL) properties of a-Si- and c-Si-based quantum wells. The PL peak energies of a-Si/SiO2and c-Si/SiO2quantum wells are blue-shifted from those of bulk a-Si and c-Si. With a decrease in the a-Si well thickness in a-Si/ SiO2quantum wells, the PL peak energy shifts to higher energy and the PL lifetime becomes shorter. The well-thickness dependence of the PL peak energy and the PL lifetime are clearly observed in a-Si/SiO2quantum wells. The confinement and localization of excitons in Si quantum structures will be discussed.