Nano-scale fatigue study of LPCVD silicon nitride thin films using a mechanical-amplifier actuator
Nano-scale fatigue study of LPCVD silicon nitride thin films using a mechanical-amplifier actuator
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DOI：
10.1088/0960-1317/17/5/013
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发表时间：
2007-05-01
影响因子：
2.3
通讯作者：
Ghodssi, Reza
中科院分区：
文献类型：
--
作者：
Chuang, Wen-Hsien;Fettig, Rainer K.;Ghodssi, Reza
本文介绍了一种纳米尺度的拉伸试验，研究LPCVD氮化硅薄膜的疲劳性能，使用一种新的静电驱动器的设计。在氮化硅薄膜中制成的机械放大器器件可以在器件的谐振频率下以相对低的致动电压（5.7-35.4 V-RMS）向测试结构施加可控的拉伸应力（2.0-7.8 GPa）。测试装置是使用表面微机械加工技术结合深反应离子蚀刻和离子铣削。随着最近开发的实验技术内的聚焦离子束系统，在原位疲劳测量进行氮化硅测试结构的束宽为200 nm。氮化硅测试结构被发现表现出时间延迟的故障，其顺应性的持续增加。通过将所施加的拉伸应力降低至3.8 GPa，测试结构可以承受高达10（8）次循环的循环载荷。
This paper describes a nano-scale tensile test to study the fatigue properties of LPCVD silicon nitride thin films using a novel electrostatic actuator design. Mechanical-amplifier devices made in silicon nitride thin films can apply controllable tensile stress (2.0-7.8 GPa) to test structures with relatively low actuation voltages (5.7-35.4 V-RMS) at the resonant frequencies of the devices. The test devices are fabricated using a surface micromachining technique in combination with deep reactive ion etching and ion milling. With the recently developed experimental techniques inside a focused-ion-beam system, in situ fatigue measurements are performed on silicon nitride test structures with beam widths of 200 nm. The silicon nitride test structures are found to exhibit time-delayed failures with continuous increases in their compliance. By reducing the applied tensile stress to 3.8 GPa, the test structures can survive cyclic loadings up to 10(8) cycles.