Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate)
Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate)
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DOI：
10.1088/0957-4484/23/34/344014
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发表时间：
2012-08
期刊：
影响因子：
3.5
通讯作者：
Ye Zhou;Su‐Ting Han;Zongxiang Xu;V. Roy
中科院分区：
文献类型：
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作者：
Ye Zhou;Su‐Ting Han;Zongxiang Xu;V. Roy
通过在聚甲基丙烯酸甲酯(PMMA)中嵌入金纳米颗粒(Au NPs)作为电荷存储元件，我们展示了空气稳定的低电压柔性非易失性存储晶体管。该纳米复合材料的溶液可加工性适合于柔性衬底上的低成本大面积加工。该存储晶体管的存储窗口为2.1V，保持时间长(>；105S)，工作电压低(≤5V)。通过改变填充物(Au NPs)的组成来调整存储器行为，这为不同的灵活电子应用提供了相对容易的加工性。发现存储器件的电学性能在弯曲下是稳定的。这些发现将对低成本、低电压的先进柔性电子产品具有参考价值。
We demonstrate air-stable low voltage flexible nonvolatile memory transistors by embedding gold nanoparticles (Au NPs) in poly(methyl methacrylate) (PMMA) as the charge storage element. The solution processability of the nanocomposite is suitable for low-cost large area processing on flexible substrates. The memory transistor exhibits a memory window of 2.1 V, long retention time ( > 105 s) with low operating voltage (≤5 V). The memory behavior has been tuned via varying the composition of the fillers (Au NPs), which offers relatively easy processability for different flexible electronics applications. The electrical properties of the memory devices are found to be stable under bending. These findings will be of value for low cost and low voltage advanced flexible electronics.