Temperature Stability of Heteropolytypic 6H/3C FETs
Temperature Stability of Heteropolytypic 6H/3C FETs
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DOI：
10.4028/www.scientific.net/msf.556-557.843
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发表时间：
2007-08
期刊：
影响因子：
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通讯作者：
Chia Ching Chen;A. Horsfall;N. Wright;K. Vassilevski
中科院分区：
文献类型：
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作者：
Chia Ching Chen;A. Horsfall;N. Wright;K. Vassilevski
The formation of two-dimensional electron gases (2DEG) at the polytypic 6H/3C heterojunction is investigated. The main of study was to obtain the properties of the 3C/6H structure using Technology Computer Aided Design (TCAD) software. The electron-density distribution and conduction band profile in 6H/3C SiC heterojunction are calculated as a function of temperature. Simulation of these hetero-junctions has concentrated on the I-V behaviour over a range of temperatures between 350 and 650 K. We show that the device characteristics are substantially degraded at high temperatures and this will limit the use of these devices to moderate temperature applications.
