Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope
Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope
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DOI：
10.1063/1.2992202
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发表时间：
2008-10-06
影响因子：
4
通讯作者：
Tabe, Michiharu
中科院分区：
文献类型：
--
作者：
Ligowski, Maciej;Moraru, Daniel;Tabe, Michiharu
本文介绍了用开尔文探针力显微镜检测薄硅层中的单个杂质。在低温下（13 K）对n-型和p-型样品的表面电位图像的分析揭示了局部电位波动，可以归因于单个磷和硼原子，分别。结果证实了由掺杂剂引起的表面电位的模拟和测量电位的背栅电压依赖性。(C)2008年美国物理研究所。
Detection of individual dopants in the thin silicon layer using Kelvin Probe Force Microscopy is presented. The analysis of the surface potential images taken at low temperatures (13 K) on n-type and p-type samples reveals local potential fluctuations that can be attributed to single phosphorus and boron atoms, respectively. Results are confirmed by simulation of surface potential induced by dopants and by the back gate voltage dependence of the measured potential. (C) 2008 American Institute of Physics.