Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer
Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer
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DOI：
10.1117/1.jpe.7.014502
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发表时间：
2017-02
影响因子：
1.7
通讯作者：
Tom H. Anderson;T. Mackay;A. Lakhtakia
中科院分区：
文献类型：
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作者：
Tom H. Anderson;T. Mackay;A. Lakhtakia
摘要。建立了一个二维有限元模型来模拟肖特基势垒太阳能电池的光电性能。该太阳能电池的核心是金属和氮掺杂铟镓氮化（InξGa1 - ξN）合金层之间的连接处，该合金层夹在减少反射的前窗和周期性波纹金属后反射器之间。通过改变参数ξ∈(0,1)，使InξGa1−ξ n层的带隙在厚度方向上周期性变化。首先，求解频域麦克斯韦假设以确定光子吸收的空间分布，从而确定电子-空穴对的产生。采用AM1.5G太阳光谱表示入射太阳通量。其次，求解了稳态电子密度和空穴密度的漂移扩散方程。数值结果表明，当InξGa1−ξN层均匀时，周期为600 nm的波形背反射器对光子的吸收效果最佳。具有周期性非均匀InξGa1−ξN层的太阳能电池的效率可能比具有均匀InξGa1−ξN层的太阳能电池高26.8%。
Abstract. A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n-doped indium gallium nitride (InξGa1−ξN) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the InξGa1−ξN layer was varied periodically in the thickness direction by varying the parameter ξ∈(0,1). First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron–hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities. Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the InξGa1−ξN layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous InξGa1−ξN layer may be higher by as much as 26.8% compared to the analogous solar cell with a homogeneous InξGa1−ξN layer.