Coupled Electromagnetic and Reaction Kinetics Simulation of Super-Resolution Interference Lithography
Coupled Electromagnetic and Reaction Kinetics Simulation of Super-Resolution Interference Lithography
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超分辨干涉光刻的电磁与反应动力学耦合模拟
DOI：
10.1021/acs.jpcb.0c05194
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Sundararaman, Ravishankar
中科院分区：
文献类型：
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作者：
Habib, Adela;Vijayamohanan, Harikrishnan;Ullal, Chaitanya K.;Sundararaman, Ravishankar
受超分辨荧光显微镜绕过衍射势垒能力的启发，双色超分辨干涉光刻利用材料中的非平衡动力学，在利用可见光的同时实现大面积纳米刻蚀。在薄膜和单分子膜中已经展示了具有低至数十纳米的超分辨特征的周期性图案。将这些进展扩展到厚膜的块体纳米刻蚀，需要定量地了解光学动力学的依赖时间的相互作用，包括在两个波长上的吸收、衍射和强度调制，以及光激活和抑制反应动力学。在这里，我们发展了一种有效的电磁微扰理论方法，首次促进了双色干涉光刻中电磁和化学动力学的完全耦合模拟。模拟结果表明，在10μm的深度范围内，衍射和吸收的影响可以忽略不计(<；0.1%)，而调节曝光时间和曝光强度可以使浓度对比度达到80%。我们研究了多种曝光策略来减小线条图案的间距，包括不同时间的顺序曝光以获得均匀的线条和等周期的多路曝光。这种快速而准确地预测光学和化学耦合动力学的能力促进了双色干涉光刻中高精度图案的计算设计。
Inspired by the ability of super-resolved fluorescence microscopy to circumvent the diffraction barrier, two-color super-resolution interference lithography exploits nonequilibrium kinetics in materials to achieve large-area nanopatterning while using visible light. Periodic patterns with super-resolved features down to tens of nanometers have been demonstrated in thin films and monolayers. Extending these advances to the bulk nanopatterning of thick films requires a quantitative understanding of the time-dependent interactions of optical dynamics, including absorption, diffraction, and intensity modulation at two wavelengths, with the photoactivated and inhibited reaction kinetics. Here, we develop an efficient electromagnetic (EM) perturbation theory approach that facilitates for the first time fully coupled simulations of EM and chemical kinetics in two-color interference lithography. Applied to a spirothiopyran-functionalized photoresist system, these simulations show that diffraction and absorption effects are negligible (<0.1%) for depths up to 10 μm, and that tuning exposure time and intensities can lead to concentration contrast up to 80%. We investigate multiple exposure strategies to reduce the pitch of the line pattern including sequential exposures with different times to achieve uniform lines and multiplexed exposures with equal periods. This capability to rapidly and accurately predict the coupled optical and chemical dynamics facilitates the computational design of high-precision patterns in two-color interference lithography.