Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
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DOI：
10.1016/j.jcrysgro.2013.09.046
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发表时间：
2014-02-15
影响因子：
1.8
通讯作者：
Ryou, Jae-Hyun
中科院分区：
文献类型：
--
作者：
Kim, Jeomoh;Lochner, Zachary;Ryou, Jae-Hyun
我们系统地研究了三元InAlN薄膜层外延生长过程中无意掺入镓（Ga）的来源和机制。通过使用不同的下垫层、再生层和生长室条件，研究了Ga自掺入的起源。结果表明，在生长室中，晶圆感受器/载流子和非冷却部件周围表面的含Ga沉积可导致InAl(Ga)N层中的Ga，而在InAl(Ga)N层下方的GaN衬底层对Ga在InAl(Ga)N层中的自动掺入没有贡献。特别是，腔内表面的含Ga沉积被认为是自动掺入Ga的主要来源，可能是由于铟（In）和Ga之间形成共晶体系导致液相蒸气压高。与p - tmai =3.7 x 10(-4) Toff和p(TMIn)=24 x 10(-5) Torr时的前驱体分压相比，液相Ga的压力p(Ga)= 3.67 x 10(-4) Torr。此外，生长室中的镁（Mg）或镁前体（Cp2Mg）可促进Ga在InAl(Ga)N层中的自结合。(C) 2013 Elsevier B.V.版权所有
We systematically study the origins and mechanisms for unintentional incorporation of gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto-incorporation of Ga have been investigated by using different underlying layers, regrown layers, and growth chamber conditions. It is shown that Ga-containing deposition on a wafer susceptor/carrier and on surrounding surfaces of uncooled parts in a growth chamber can be responsible for Ga in the InAl(Ga)N layers, while a GaN underlying layer below an InAl(Ga)N layer does not contribute to the auto incorporation of Ga in the InAl (Ga)N layers. Especially, the Ga-containing deposition on the surfaces inside the chamber is believed to be the dominant source of auto incorporated Ga, possibly due to the high vapor pressure of a liquid phase as a result of eutectic system formation between indium (In) and Ga. The pressure of liquid phase Ga, p(Ga)=similar to 3.67 x 10(-4) Torr, can be significant as compared to precursor partial pressures with P-TMAI=3.7 x 10(-4) Toff and p(TMIn)=24 x 10(-5) Torr. In addition, magnesium (Mg) or magnesium precursor (Cp2Mg) in the growth chamber is shown to promote the auto incorporation of Ga in the InAl(Ga)N layers. (C) 2013 Elsevier B.V. All rights reserved