Structure of the Reduced TiO2(110) Surface Determined by Scanning Tunneling Microscopy
Structure of the Reduced TiO2(110) Surface Determined by Scanning Tunneling Microscopy
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扫描隧道显微镜测定还原 TiO2(110) 表面的结构
DOI：
10.1126/science.250.4985.1239
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发表时间：
1990
期刊：
影响因子：
56.9
通讯作者：
D. Bonnell
中科院分区：
文献类型：
--
作者：
G. Rohrer;V. Henrich;D. Bonnell
利用扫描隧道显微镜在超高真空条件下对还原TiO2（110）表面进行了成像。具有周期性范围从21到3.4埃的结构单元已被清晰成像，表明离子的原子分辨率成像，宽带隙（3.2电子伏特）半导体是可能的。观察到的表面结构可以用一个模型来解释，该模型涉及二维缺陷的有序排列，称为晶体剪切面，并表明非化学计量氧化物表面的形貌可能是复杂的。
The scanning tunneling microscope has been used to image a reduced TiO2(110) surface in ultrahigh vacuum. Structural units with periodicities rangng from 21 to 3.4 angstroms have been clearly imaged, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible. The observed surface structures can be explained by a model involving ordered arrangements of two-dimensional defects known as crystallographic shear planes and indicate that the topography of nonstoichiometric oxide surfaces can be complex.