Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers
Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers
复制标题
量子限制半导体激光器的缩放定律和最小阈值电流
DOI：
10.1063/1.100056
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发表时间：
1988
影响因子：
4
通讯作者：
A. Yariv
中科院分区：
文献类型：
--
作者：
A. Yariv
导出了体、二维（量子阱）和一维（量子线）半导体激光器的基本标度律。从束缚载流子的光学性质的量子推导出发，明确了标度律的维数依赖性。单量子阱和量子线激光器的阈值电流分别为100 μ A和2-3 μA。这种分析的基本考虑最近被用于获得超低阈值量子阱激光器[P.L.德里，A. Yariv，K. Lau，N.巴尔哈伊姆K Lee和J. Rosenberg，Appl. Phys. Lett. 50，1773（1987）]。
Basic scaling laws are derived for bulk, two‐dimensional (quantum well) and one‐dimensional (quantum wire) semiconductor lasers. Starting from quantum derivation of the optical properties of confined carriers, the dimensional dependencies of the scaling laws are made explicit. Threshold currents of ∼100 and 2–3 μA are predicted for single quantum well and quantum wire lasers, respectively. The basic considerations of this analysis were used recently to obtain ultralow threshold quantum well lasers [P. L. Derry, A. Yariv, K. Lau, N. Bar‐Chaim, K. Lee, and J. Rosenberg, Appl. Phys. Lett. 50, 1773 (1987)].