Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions
Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions
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多层范德华 ReSe2/WS2 p-n 异质结中的栅极可调二极管电流整流和双极输运
DOI：
10.1039/c6cp04752a
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发表时间：
2016
影响因子：
3.3
通讯作者：
Liu Qian
中科院分区：
文献类型：
--
作者：
Wang Cong;Yang Shengxue;Xiong Wenqi;Xia Congxin;Cai Hui;Chen Bin;Wang Xiaoting;Zhang Xinzheng;Wei Zhongming;Tongay Sefaattin;Li Jingbo;Liu Qian
二维过渡金属二硫属化合物垂直堆叠货车德瓦耳斯（vdW）异质结由于其独特的性质而引起了人们的广泛关注。在这项工作中，我们报告了两个重要的栅极可调现象，在新的人工vdW p-n异质结垂直堆叠的p型多层ReSe 2和n型多层WS 2创建：（1）在p-n界面上观察到明确的强栅极可调二极管类电流整流，电子过程的可调谐性归因于隧穿-由跨vdW界面的多数载流子引起的辅助层间复合;（2）在正向和反向偏置电压下，vdW ReSe 2/WS 2异质结晶体管和相应的输运模型提出了可调极性行为。这些发现可能为构建纳米级电子和光电器件提供一些新的机会。
Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p–n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p–n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.