Quantum interference devices made from superconducting oxide thin films
Quantum interference devices made from superconducting oxide thin films
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DOI：
10.1063/1.98922
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发表时间：
1987-07
影响因子：
4
通讯作者：
R. Koch;C. Umbach;G. J. Clark;P. Chaudhari;R. Laibowitz
中科院分区：
文献类型：
--
作者：
R. Koch;C. Umbach;G. J. Clark;P. Chaudhari;R. Laibowitz
我们用超导氧化物 YBa2Cu3Oy 薄膜制造了超导量子干涉器件（dc SQUID）。该器件首先通过光刻图案化离子注入掩模，该掩模包含 40 x 40 μm 的环路和两个 17 μm 宽的薄弱连接，位于约 1 μm 厚的氧化膜上。然后使用离子注入来破坏器件周围薄膜的超导性，而无需实际去除材料，从而形成 SQUID 的完全平面结构。 SQUID 的运行温度范围为 4.2 至 68 K。这些材料的超导通量量子经测量为 h/2e。
We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17‐μm‐wide weak links over a ∼1‐μm‐thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.