Tensile-strained GaAs quantum wells and quantum dots in aGaAsxSb1−xmatrix
Tensile-strained GaAs quantum wells and quantum dots in aGaAsxSb1−xmatrix
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aGaAsxSb1−x 矩阵中的拉伸应变 GaAs 量子阱和量子点
DOI：
10.1103/physrevb.70.205314
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发表时间：
2004
影响因子：
3.7
通讯作者：
R. Sauer
中科院分区：
文献类型：
--
作者：
A. Toropov;O. Lyublinskaya;B. Meltser;V. A. Solov'ev;A. Sitnikova;M. Nestoklon;O. V. Rykhova;S. Ivanov;K. Thonke;R. Sauer
我们报告的制造和分析的拉伸应变薄GaAs层（“插入层”）的amatrix。GaAs插入层的标称厚度在0.6-2个单层的范围内变化。它们是通过分子束外延生长在GaSb衬底上。透射电子显微镜研究表明，超薄量子威尔斯（QW）或自组织形成的量子点（QD）的生长，这取决于标称厚度的插入层。在带边以下的光子能量处观察到两个光致发光（PL）峰。其中之一，检测附近的任何插入层厚度，是由于发射的II型量子阱。在较厚的插入层中向较小能量移动的第二个峰被分配给II型量子点的PL。量子阱电子态的微观紧束缚计算支持这一分配。
We report on the fabrication and analysis of tensily strained thin GaAs layers (“insertion layers”) in amatrix. The GaAs insertion layers vary in nominal thickness in the range of 0.6–2 monolayers. They were grown by molecular beam epitaxy on GaSb substrates. Transmission electron microscopy studies indicated either growth of ultra-thin quantum wells (QWs) or self-organized formation of quantum dots (QDs), depending on the nominal thickness of the insertion layers. Two photoluminescence (PL) peaks are observed at photon energies below theband edge. One of them, detected nearfor any insertion layer thickness, is attributed to the emission of a type II QW. The second peak shifted toward smaller energies in the thicker insertion layers is assigned to the PL of type II QDs. This assignment is supported by microscopic tight-binding calculations of the QW electron states.