Investigations of helium incorporated into a film deposited by magnetron sputtering
Investigations of helium incorporated into a film deposited by magnetron sputtering
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磁控溅射沉积薄膜中掺入氦气的研究
DOI：
10.1088/0022-3727/40/7/044
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发表时间：
2007-04-07
影响因子：
3.4
通讯作者：
Wang, L. B.
中科院分区：
文献类型：
--
作者：
Liu, Chao-Zhuo;Shi, L. Q.;Wang, L. B.
采用磁控溅射法在氦氩混合气体中制备了含氦钛薄膜。这种方法明显不同于传统的氦引入金属。高浓度的氦，高达45 at.%离子束分析表明，在体相中分布均匀。氦掺入的过程被认为是其中的氦粒子被大力背散射从目标，飞通过辉光放电区，并因此嵌入到生长的薄膜。它实际上是一种基于等离子体技术的薄膜沉积过程中的连续亚阈值能量注入。氩气的有限分压是为了维持放电和溅射钛靶。通过调节工作气体的压力，可以方便地控制掺入的氦气含量。X射线衍射、透射电子显微镜、正电子束多普勒展宽分析和氦热脱附谱揭示了钛膜的微观结构、氦泡的状态、与氦有关的缺陷特征以及氦从钛膜中的热释放行为。
Helium-containing titanium film was prepared by magnetron sputtering in a gas mixture of helium and argon. This method distinctly differs from traditional helium introduction into metals. A high concentration of helium up to 45 at.% and a uniform distribution in the bulk were shown by ion beam analysis. The process of helium incorporation is considered in which the helium particles are energetically backscattered from the target, fly through the glow discharge zone and are consequently embedded into the growing film. It is virtually a continuous sub-threshold-energy implantation during film deposition based on the plasma technique. The limited partial pressure of argon is to maintain the discharge and sputter the titanium target. The helium content incorporated can be controlled conveniently by adjusting the pressure of the working gases. X-ray diffraction, transmission electron microscopy, Doppler broadening of positron beam analysis and thermal helium desorption spectroscopy revealed the microstructure of titanium films, the state of helium bubbles, the defect characteristic related to helium and thermal release behaviour of helium from the titanium film.