Single-Crystal Field-Effect Transistors Based on Organic Selenium-Containing Semiconductor
Single-Crystal Field-Effect Transistors Based on Organic Selenium-Containing Semiconductor
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DOI：
10.1143/jjap.44.3712
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发表时间：
2004-11
影响因子：
1.5
通讯作者：
R. Zeis;C. Kloc;K. Takimiya;Y. Kunugi;Yasushi Konda;Naoto Niihara;T. Otsubo
中科院分区：
文献类型：
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作者：
R. Zeis;C. Kloc;K. Takimiya;Y. Kunugi;Yasushi Konda;Naoto Niihara;T. Otsubo
本文报道了基于2,6-二苯基苯并[1,2-b:4,5-b']二烯苯（DPh-BDSe）的单晶场效应晶体管（fet）的制备和表征。这些有机场效应晶体管（ofet）作为p沟道累积模式器件。在室温下，对于最好的器件，阈值电压小于-7 V，电荷载流子迁移率几乎与栅极偏置无关，根据源漏偏置的不同，迁移率在1到1.5 cm2/(V s)之间。在室温以下冷却时，迁移率略有增加，在280k以下降低。
We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b']diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.