Effects of a power and photon energy of incident light on near-field etching properties
Effects of a power and photon energy of incident light on near-field etching properties
复制标题
入射光功率和光子能量对近场刻蚀性能的影响
DOI：
10.1007/s00339-017-1361-z
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and K. Nobusada
中科院分区：
文献类型：
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作者：
T. Yatsui;H. Saito;K. Nishioka;B. Leuschel;O. Soppera;and K. Nobusada
我们开发了一种近场刻蚀技术，用于实现各种材料和结构的超平坦表面。为了阐明近场刻蚀特性，我们研究了入射光的功率和光子能量的影响。首先，我们从理论上证明了光子能量低于分子吸收边的近场可以诱导分子振动。我们使用纳米金刚石来研究近场蚀刻特性的功率依赖性。从纳米金刚石的拓扑变化，我们证实了线性依赖的蚀刻体积与入射功率。此外，我们研究了光子能量的依赖性，使用TiO 2纳米条纹结构，这表明，较低的光子能量的结果在较低的蚀刻速率。
We developed a near-field etching technique for realizing an ultra-flat surfaces of various materials and structures. To elucidate the near-field etching properties, we have investigated the effects of power and the photon energy of the incident light. First, we established theoretically that an optical near-field with photon energy lower than the absorption edge of the molecules can induce molecular vibrations. We used nanodiamonds to study the power dependence of the near-field etching properties. From the topological changes of the nanodiamonds, we confirmed the linear-dependence of the etching volume with the incident power. Furthermore, we studied the photon energy dependence using TiO2nanostriped structures, which revealed that a lower photon energy results in a lower etching rate.