A 50 dB high-gain operational amplifier integrated with metal-oxide TFTs
A 50 dB high-gain operational amplifier integrated with metal-oxide TFTs
复制标题
集成金属氧化物 TFT 的 50 dB 高增益运算放大器
DOI：
10.1088/1361-6641/ac8bec
复制
发表时间：
2022
影响因子：
1.9
通讯作者：
Jun-Biao Peng
中科院分区：
文献类型：
--
作者：
Jun-Rong Chen;Wen-Xing Xu;Wen-Cai Zuo;Xianglin Mei;Lei Zhou;Miao Xu;Lei Wang;Wei-Jing Wu;Yu-Rong Liu;Jun-Biao Peng
本文介绍了一种采用单极n型氧化铟锌薄膜晶体管(TFT)制作的50dB高增益运算放大器(OPAMP)。采用不同的正反馈技术来获得足够的电压增益。在电源电压为20V时，在15 kHz的-3dB带宽内，所制作的OPAMP的开环电压增益(Av)为50dB，单位增益频率(FUG)和直流功耗分别为500 kHz和8.07 mW。此外，还介绍了一种有效的频率补偿方案，并进行了仿真。仿真结果表明，补偿后的运放在150 kHz单位增益频率下的电压增益为50分贝，相位裕度为60°。
Abstract This paper presents a 50 dB high-gain operational amplifier (OPAMP) ,which is fabricated by unipolar n-type indium-zinc-oxide (IZO) thin-film transistors (TFTs). Different positive feedback technologies are employed to achieve sufficient voltage gain. The fabricated OPAMP exhibits an open-loop voltage gain (Av) of 50 dB over a -3 dB bandwidth of 15 kHz at the supply voltage of 20 V. The measured unity-gain frequency (fUG) and the DC power consumption are 500 kHz and 8.07 mW, respectively. In addition, an effective frequency compensation scheme is also introduced and simulated. The simulation results that the proposed OPAMP has a voltage gain of 50 dB with 60° phase margin at 150 kHz unity-gain frequency after compensation.