Sputtered Aluminum Oxide and p + Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe x Te 1-x and CdTe Photovoltaics
Sputtered Aluminum Oxide and p + Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSe x Te 1-x and CdTe Photovoltaics
复制标题
溅射氧化铝和 p 非晶硅背接触可改善多晶 CdSe x Te 1-x 和 CdTe 光伏器件中的空穴提取
DOI：
10.1109/pvsc40753.2019.8980466
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Reich, Carey
中科院分区：
文献类型：
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作者：
Danielson, Adam;Abbas, Ali;Walls, John M.;Holman, Zachary;Sampath, Walajabad;Munshi, Amit;Onno, Arthur;Weigand, William;Kindvall, Anna;Reich, Carey
在CdSexTe1-x/CdTe器件背面沉积了一层Al2O3膜，钝化了背界面，显著提高了表面复合寿命和光致发光响应。尽管如此，这些器件并没有显示出开路电压(VOC)的改善。在Al_2O_3的后面增加一层p+非晶硅层使导带向上弯曲，降低了空穴提取的势垒，提高了收集性能。进一步优化氧化铝、非晶硅(a-Si)和掺铟氧化锡(ITO)层，以及它们与氯化镉钝化工艺的相互作用，对于将这些电光改进转化为电压增益是必要的。
A thin layer of Al2O3at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+amorphous silicon layer behind the Al2O3bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2passivation process, are necessary to translate these electro-optical improvements into gains in voltage.