Splitting of the quantum Hall transition in disordered graphenes
Splitting of the quantum Hall transition in disordered graphenes
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DOI：
10.1103/physrevb.75.033412
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发表时间：
2007-01
影响因子：
3.7
通讯作者：
M. Koshino;T. Ando
中科院分区：
文献类型：
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作者：
M. Koshino;T. Ando
研究了单层石墨烯中无相互作用电子的双量子霍尔效应。我们计算的霍尔电导率在一个单一的朗道水平的存在下的随机性的键耦合和在现场的潜力，并估计的临界能量的量子霍尔跃迁。结果表明，谷简并（K点和K′点）朗道能级包含两个位移的临界能，表明其内部出现了额外的Hall平台，同时发现N = 0的朗道能级的局域化比N = 1的强得多.
Integer quantum Hall effect is studied for a non-interacting electron in a monolayer graphene. We calculate the Hall conductivity within a single Landau level in the presence of randomness in the bond couplings and in the on-site potential, and estimate the critical energies for the quantum Hall transition. We show that valley-degenerated (K and K′-points) Landau levels contain two displaced critical energies indicating that an extra Hall plateau appears inside, while the localization is found to be much stronger in the Landau level N = 0 than in N = 1.