Nanowire resonant tunneling diodes
Nanowire resonant tunneling diodes
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DOI：
10.1063/1.1527995
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发表时间：
2002-12-02
影响因子：
4
通讯作者：
Samuelson, L
中科院分区：
文献类型：
--
作者：
Björk, MT;Ohlsson, BJ;Samuelson, L
半导体异质结构及其在电子和光子器件中的实现对科学和技术产生了巨大的影响。在量子纳米电子学的发展中，一维异质结构器件受到了广泛的关注。在这里，我们报告功能一维共振隧穿二极管通过自下而上的组件的设计段不同的半导体材料在III/V纳米线。发射极、集电极和中心量子点由InAs制成，势垒材料由InP制成。在低温下观察到理想的共振隧穿行为，峰谷比高达50：1，电流密度为1 nA/mum（2）。(C)2002年美国物理学会。
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.