Current-Mode Logic in Organic Semiconductor Based on Source-Gated Transistors
Current-Mode Logic in Organic Semiconductor Based on Source-Gated Transistors
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DOI：
10.1109/led.2009.2013489
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发表时间：
2009-04-01
影响因子：
4.9
通讯作者：
Shannon, J. M.
中科院分区：
文献类型：
--
作者：
Guo, Xiaojun;Shannon, J. M.
由于有机场效应晶体管（ofet）的低迁移率和丰富的（rap）态，传统的基于逻辑电路的ofet工作需要较大的电压摆幅，并且具有较大的开关噪声和较低的速度。在本文中，基于现有的材料和工艺技术，提出了由有机源门控晶体管（osgt）组成的电流模式逻辑（CML）电路，用于高速信号。混合模式仿真表明，使用简单阻性负载的CML电路仍然可以比具有完美主动负载和无ofet或（raps）的理想传统逆变器更快地工作。在相同的电源电压和器件参数下，CML电路可以在很宽的信号波动范围内工作。osgt优异的模拟性能在低功耗、高输出阻抗和稳定性方面也很好地满足了CML电路的设计要求。
Due to the low mobility and the abundance of (rap states in organic field-effect transistors (OFETs), the operation of conventional logic circuits-based OFETs needs a large voltage swing, and suffers large switching noise and low speed. In this letter, current-mode logic (CML) circuits composed of organic source-gated transistors, (OSGTs) are proposed For high-speed signaling based on existing material and process technologies. Mixed-mode simulations show that CML circuits using simple resistive loads can still he operated much faster than an ideal conventional inverter with perfect active loads and OFETs free or (raps. With the same supply voltage and device parameters,, CML circuits can work with a wide range of signal swings. The superior analog performance of OSGTs is also shown to fit well with the design requirements for CML circuits in terms of low power supply, high output impedance, and stability.