ELECTRONIC-STRUCTURE OF SM MONOCHALCOGENIDES
ELECTRONIC-STRUCTURE OF SM MONOCHALCOGENIDES
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DOI：
10.1103/physrevb.14.5503
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发表时间：
1976-01-01
影响因子：
3.7
通讯作者：
WACHTER, P
中科院分区：
文献类型：
--
作者：
BATLOGG, B;KALDIS, E;WACHTER, P
研究了半导体SmS， SmSe和SmTe单晶以及SmS的金属高压相的光学反射率，光子能量在0.03 ~ 12 eV之间，金属SmS也在4.2 ~ 300 K之间。通过Kramers-Kronig分析导出了介电函数，并用带间和带内跃迁解释了介电函数。此外，制备了半导体蒸发薄膜，并研究了吸收随温度（4.2 ~ 300 K）和压力（0 ~ 1.5 kbar）的变化规律。结果表明，通过4f电子态能量的简单均匀移动，可以得到具有半导体性质的Sm单硫族化合物的电子结构。单晶、金属钐的价态波动比目前所假设的要低得多。
The optical reflectivity of single crystals of semiconducting SmS, SmSe, and SmTe as well as of the metallic, high-pressure phase of SmS has been investigated in the photon energy range between 0.03 and 12 eV, for metallic SmS also between 4.2 and 300 K. The dielectric functions have been derived by means of a Kramers-Kronig analysis and been interpreted by interband and intraband transitions. In addition, semiconducting evaporated films of SmS have been prepared and the absorption in function of temperature (4.2-300 K) and pressure (0-1.5 kbar) has been investigated. It can be shown that the electronic structure of the semiconducting Sm monochalcognides can be obtained from the corresponding one of the Eu monochalcogenides by a simple uniform shift in the energy of the 4 f electronic state. Valence fluctuations in single crystalline, metallic SmS are present to a much lower degree than assumed so far.