Investigation on GaAs surface treated with dimethylaluminumhydride
Investigation on GaAs surface treated with dimethylaluminumhydride
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DOI：
10.1063/1.3268450
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发表时间：
2009-11
影响因子：
4
通讯作者：
Hongliang Lu;Xiao-Liang Wang;M. Sugiyama;Y. Shimogaki
中科院分区：
文献类型：
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作者：
Hongliang Lu;Xiao-Liang Wang;M. Sugiyama;Y. Shimogaki
用X射线光电子能谱研究了用二甲基氢化铝（DMAH）还原和去除脱脂和HCl处理的GaAs衬底表面自然氧化物。结果表明，在300 °C下暴露于DMAH后，更高的氧化物状态更容易从GaAs表面去除。在10 s DMAH曝光下，HCl处理的GaAs表面上的原生氧化物完全消耗。此外，随着DMAH暴露的增加，Al-O键的金属化证实了GaAs上的原生氧化物的减少。
The reduction and removal of surface native oxides from as-degreased and HCl-treated GaAs substrates using dimethylaluminumhydride (DMAH) have been studied by x-ray photoelectron spectroscopy. It is revealed that higher oxide states are more easily removed from the GaAs surface after exposure to DMAH at 300 °C. Complete consumption of native oxides on HCl-treated GaAs surface has been realized with 10 s DMAH exposure. In addition, the metallization of the Al–O bonding with increase of DMAH exposure confirms the reduction of native oxides on GaAs.