Measurements of Deposition Rate and Substrate Heating in a HiPIMS Discharge
Measurements of Deposition Rate and Substrate Heating in a HiPIMS Discharge
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DOI：
10.1002/ppap.200931202
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发表时间：
2009-06
影响因子：
3.5
通讯作者：
G. West;P. Kelly;Paul Barker;Abhijeet Mishra;J. Bradley
中科院分区：
文献类型：
--
作者：
G. West;P. Kelly;Paul Barker;Abhijeet Mishra;J. Bradley
连续直流，脉冲直流和高功率脉冲磁控溅射（HiPIMS）磁控管放电在相同的时间平均放电功率的热能通量传递到基板的位置进行了测量。这些值随后被归一化为测量的沉积速率。在相同的工艺条件下生长钛涂层，并通过X射线衍射分析晶体结构的变化。发现的HiPIMS放电提供了一个显着较低的归一化的热能通量的基板比连续直流和脉冲直流溅射，这是在涂层温度敏感的基板的潜在好处，同时也使频率依赖性的修改的膜特性所产生的电离沉积通量在这个过程中固有的。
The thermal energy flux delivered to the substrate position was measured for continuous-dc, pulsed dc- and high-power impulse magnetron sputtering (HiPIMS) magnetron discharges at the same time-averaged discharge powers. These values were subsequently normalised for measured deposition rates. Titanium coatings were grown under the same process conditions and analysed for alterations in crystal structure via X-ray diffraction. The HiPIMS discharges were found to deliver a significantly lower normalised thermal energy flux to the substrate than both continuous-dc and pulsed-dc sputtering, which is of potential benefit in coating temperature-sensitive substrates; whilst also enabling frequency-dependent modification of film properties resulting from the ionised deposition flux inherent in this process.