Minority carrier transport in carbon doped gallium arsenide
Minority carrier transport in carbon doped gallium arsenide
复制标题
碳掺杂砷化镓中的少数载流子输运
DOI：
10.1063/1.107375
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发表时间：
1992
影响因子：
4
通讯作者：
G. Stillman
中科院分区：
文献类型：
--
作者：
C. Colomb;S. A. Stockman;S. Varadarajan;G. Stillman
在室温和77 K下，使用零场飞行时间（ZFTOF）技术测量了p型C掺杂GaAs中的少数载流子电子迁移率和扩散长度，p+-n结构的p+载流子浓度为1.1×1019，6.0×1018，1.8×1018 cm−3，这些结构是使用CCl 4作为掺杂剂通过低压金属有机化学气相沉积（MOCVD）生长的。获得的电子迁移率高于Be掺杂MBE GaAs的报道，但低于Ge掺杂LPE GaAs的报道，而扩散长度与类似浓度的Be掺杂样品中发现的相似。
Minority carrier electron mobilities and diffusion lengths in p‐type C‐doped GaAs have been measured at room temperature and 77 K using the zero field time of flight (ZFTOF) technique on p+–n structures with p+ carrier concentrations of 1.1×1019, 6.0×1018, 1.8×1018 cm−3, which were grown by low‐pressure metalorganic chemical vapor deposition (MOCVD) using CCl4 as the dopant. The electron mobilities obtained are higher than those reported for Be‐doped MBE GaAs but lower than those reported for Ge‐doped, LPE GaAs, while the diffusion lengths are similar to those found in similar concentration Be‐doped samples.