Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition
Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition
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DOI：
10.1063/1.3651400
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发表时间：
2011-10
影响因子：
3.2
通讯作者：
A. Molle;S. Baldovino;M. Fanciulli;D. Tsoutsou;E. Golias;A. Dimoulas
中科院分区：
文献类型：
--
作者：
A. Molle;S. Baldovino;M. Fanciulli;D. Tsoutsou;E. Golias;A. Dimoulas
在Ge衬底和LaGeOx薄膜的原子氧辅助分子束沉积生长的界面处的电子捕获的变化推断后沉积退火处理的电检测磁共振（EDMR）光谱和Pt/LaGeOx/Ge金属氧化物半导体（MOS）电容器的电响应上的沉积膜。退火后MOS电容器的电性能的改善与EDMR检测到的氧化物缺陷的减少是一致的，氧化物缺陷与LaGeOx层中的GeO物种有关，如X射线光电子能谱所证明的。沉积膜的电检测磁共振（EDMR）光谱和Pt/LaGeOx/Ge金属氧化物半导体（MOS）电容器的电响应。MOS电容器在退火时的改进的电性能与EDMR检测到的氧化物缺陷的减少一致，氧化物缺陷与LaGeOx层中的GeO物质相关，如通过X射线光电子能谱所证明的。
Changes in the electron trapping at the interface between Ge substrates and LaGeOx films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeOx/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeOx layer as evidenced by x-ray photoelectron spectroscopy.Changes in the electron trapping at the interface between Ge substrates and LaGeOx films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeOx/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeOx layer as evidenced by x-ray photoelectron spectroscopy.