JSR EUV Resist Development toward 22nmhp Design and Beyond
JSR EUV Resist Development toward 22nmhp Design and Beyond
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JSR EUV 抗蚀剂向 22nmhp 及以上设计发展
DOI：
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发表时间：
2010
期刊：
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通讯作者：
T. Kai
中科院分区：
文献类型：
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作者：
Tooru Kimura;Kouta Nishino;M. Shimizu;Y. Hirai;Ken Maruyama;T. Kai
为了在实际应用中实现EUV的目标抗蚀剂性能，我们开发了分子玻璃（MG），PAG和酸放大器（AA）等新材料。受保护的NORIA，一种分子玻璃，被检查用于扩展分辨率极限。具有受保护的NORIA的抗蚀剂在EUV曝光下显示22nm hp分辨率。研究了PAG酸在轻水堆中的扩散效应。结果表明，酸扩散控制是提高轻水比的重要因素之一。为了提高灵敏度，研究了酸放大器的应用。抗蚀剂与AA获得了25%的灵敏度提高比原来的配方。提出了EUV抗蚀剂主要进展的基本技术。
In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated. The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.