Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors
Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors
复制标题
DOI：
10.1038/nmat4064
复制
发表时间：
2014-12-01
期刊：
影响因子：
41.2
通讯作者：
Xu, Xiaodong
中科院分区：
文献类型：
--
作者：
Huang, Chunming;Wu, Sanfeng;Xu, Xiaodong
具有不同带隙的三维（3D）半导体之间的异质结是现代发光二极管（1）、二极管激光器（2）和高速晶体管（3）的基础。在不同的2D半导体之间创建类似的异质结将使2D平面内的能带工程成为可能（4-6），并开辟了材料科学，器件物理和工程的新领域。在这里，我们证明了无缝高质量的平面异质结可以生长在2D单层半导体MoSe 2和WSe 2之间。使用物理气相传输（7）通过横向异质外延生长的结在光学显微镜下可见，并显示出增强的光致发光。原子分辨透射电子显微镜显示，它们的结构是一个未变形的蜂窝晶格，其中一种过渡金属被另一种过渡金属取代发生在整个界面上。这种横向结的生长将允许新的器件功能，例如面内晶体管和二极管，被集成在单个原子级薄层内。
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes(1), diode lasers(2) and high-speed transistors(3). Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane(4-6) and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral heteroepitaxy using physical vapour transport(7), are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.