A 6-Bit/200-MHz Full Nyquist A/D Converter
A 6-Bit/200-MHz Full Nyquist A/D Converter
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6 位/200MHz 全奈奎斯特 A/D 转换器
DOI：
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发表时间：
1984
影响因子：
5.4
通讯作者：
W. Luschnig
中科院分区：
文献类型：
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作者：
B. Zojer;R. Petschacher;W. Luschnig
本文介绍了一种超高速6位Flash A/D转换器的研制。为了深入了解速度限制的性质，已经研究了在非常高的采样率下操作所产生的影响。这导致了一个优化的双级比较器电路的实施。该芯片已在一个快速的标准氧化物隔离双极工艺。在200 MHz的采样率下，测量结果显示出出色的动态性能（高信噪比，无误码），输入频率高达100 MHz。
This paper deals with the development of an extremely fast 6-bit flash A/D converter. To gain insight into the nature of speed limitations, the effects arising from operation at very high sampling rates have been investigated. This led to the implementation of an optimized double-stage comparator circuit. The chip has been fabricated in a fast standard oxide isolated bipolar process. At a sampling rate of 200 MHz, measurements show excellent dynamic performance (high signal-to-noise ratio, no error codes) up to input frequencies of 100 MHz.