Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors
Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors
复制标题
Sn浓度对多晶GeSn薄膜晶体管的影响
DOI：
10.1109/led.2021.3119014
复制
发表时间：
2021
影响因子：
4.9
通讯作者：
Toko Kaoru
中科院分区：
文献类型：
--
作者：
Moto Kenta;Yamamoto Keisuke;Imajo Toshifumi;Suemasu Takashi;Nakashima Hiroshi;Toko Kaoru
GeSn的薄膜晶体管（TFT）应用作为提高电子器件性能的手段已经引起关注。基于我们先进的固相晶化和TFT工艺技术，我们全面研究了多晶GeSn薄膜特性与TFT特性之间的关系。初始Sn浓度显著地改变了GeSn层的晶体和电学性质。过量的Sn（%）沉淀在GeSn中并降低其性能，而适量的Sn有效地钝化了Ge中的缺陷并降低了缺陷诱导的受主和晶界陷阱的密度，同时保持了高的霍尔空穴迁移率（>200 cm 2 V − 1 s −1）。在400 °C下制造的累积模式TFT的性能也强烈依赖于，实现高场效应迁移率（170 cm 2 V-1 s-1）和开/关比（103）at%。该性能在沟道中具有晶界的Ge基TFT中显示为最高。
Thin-film transistor (TFT) applications of GeSn have attracted attention as a means of improving the performance of electronic devices. Based on our advanced solid-phase crystallization and TFT process technologies, we comprehensively studied the relationship between the film properties and TFT characteristics of polycrystalline GeSn. The initial Sn concentrationsignificantly changed the crystal and electrical properties of the GeSn layer. Excess Sn (%) precipitated in GeSn and degraded its properties, whereas the appropriate amount of Sn effectively passivated defects in Ge and reduced the density of defect-induced acceptors and grain boundary traps while maintaining a high Hall hole mobility (>200 cm2V−1s−1). The performance of the accumulation-mode TFTs fabricated under 400 °C also strongly depended on, achieving both a high field-effect mobility (170 cm2V−1s−1) and on/off ratio (103) at%. This performance was shown to be the highest among Ge-based TFTs with grain boundaries in the channel.