Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
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(0001)蓝宝石衬底上卤化物气相外延两步生长(0001)ZnO单晶层
DOI：
10.1143/jjap.50.125503
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发表时间：
2011
影响因子：
1.5
通讯作者：
Akinori Kouikitu
中科院分区：
文献类型：
--
作者：
Rui Masuda;Rie Togashi;Hisashi Murakami;Yoshinao Kumagai;Akinori Kouikitu
研究了采用两步生长程序通过卤化物气相外延在 (0001) 蓝宝石衬底上异质外延生长 (0001) ZnO。 X射线衍射分析表明，(0001)蓝宝石衬底上的单晶(0001)ZnO层在400℃下生长。以400℃下生长的ZnO层作为缓冲层，通过两步生长实现了(0001)蓝宝石衬底上1000℃的高温异质外延。在厚度大于 0.4 µm 的缓冲层上实现了 1000 C 的二维层生长。在室温下对生长在 0.4 µm 厚的缓冲层上的 ZnO 层进行的光致发光 (PL) 测量显示出近带边发射 (NBE) 的显着蓝移。研究发现，0.8 µm 厚的缓冲层对于成功的两步生长是必要的，并且不会导致 PL 光谱中的 NBE 发生蓝移（这是由大的压应力引起的）。
The heteroepitaxial growth of (0001) ZnO on (0001) sapphire substrates by halide vapor phase epitaxy using a two-step growth procedure was investigated. X-ray diffraction analysis revealed that single-crystal (0001) ZnO layers on (0001) sapphire substrates were grown at 400 C. High-temperature heteroepitaxy at 1000 C on (0001) sapphire substrates was realized by two-step growth using the ZnO layer grown at 400 C as a buffer layer. Two-dimensional layer growth at 1000 C was realized on buffer layers thicker than 0.4 µm. Photoluminescence (PL) measurements performed at room temperature for the ZnO layer grown on the 0.4-µm-thick buffer layer showed a significant blueshift of near-band-edge emission (NBE). A thick buffer layer of 0.8 µm was found to be necessary for a successful two-step growth without a blueshift of NBE in the PL spectra, which is caused by a large compressive stress.