Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film
Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film
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DOI：
10.1016/j.jallcom.2011.08.033
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发表时间：
2011-10
影响因子：
6.2
通讯作者：
J. Jeon;D. Jeon;T. Sahoo;M. Kim;J. Baek;J. Hoffman;N. Kim;In‐Hwan Lee
中科院分区：
文献类型：
--
作者：
J. Jeon;D. Jeon;T. Sahoo;M. Kim;J. Baek;J. Hoffman;N. Kim;In‐Hwan Lee
研究了退火温度对氧化铟锌（IZO）（In2O3:ZnO=90:10wt.%）薄膜电学和光学性能的影响。通过射频磁控溅射将 IZO 薄膜沉积在玻璃基板上，然后在空气和氧气的混合环境中在 100、200 和 300°C 下进行退火。发现所有 IZO 薄膜都具有非晶结构。随着退火温度的升高，载流子浓度降低，电阻率增大。 IZO薄膜的平均透过率随退火温度略有下降。有趣的是，随着退火温度的升高，光学带隙从 3.79eV 系统性减小到 3.67eV。观察到光学带隙的变化主要是由 Burstein-Moss 带隙加宽效应引起的，表明不存在带窄效应。详细讨论了对 IZO 薄膜光学和电学性能的影响。
The effect of annealing temperature on the electrical and optical properties of indium zinc oxide (IZO) (In2O3:ZnO=90:10wt.%) thin films has been investigated. The IZO thin films were deposited on glass substrates by radio frequency magnetron sputtering and then subjected to annealing in a mixed ambient of air and oxygen at 100, 200 and 300°C. All the IZO films were found to have amorphous structure. With the increase of the annealing temperature, the carrier concentration decreased and the resistivity increased. The average transmittance of IZO thin films decreased slightly with annealing temperature. Interestingly, a systematic reduction of the optical band-gap from 3.79eV to 3.67eV was observed with annealing temperature. The change in optical band-gap was observed to be caused predominantly by Burstein-Moss band-gap widening effect suggesting unusual absence of band narrowing effect. The effects on optical and electrical properties of IZO films have been discussed in detail.