High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition
High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition
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DOI：
10.1063/1.3635401
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发表时间：
2011-09
影响因子：
4
通讯作者：
Yijun Zhang;Benkang Chang;Jun Niu;J. Zhao;J. Zou;F. Shi;Hongchang Cheng
中科院分区：
文献类型：
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作者：
Yijun Zhang;Benkang Chang;Jun Niu;J. Zhao;J. Zou;F. Shi;Hongchang Cheng
为了提高感兴趣波长区域的量子效率，开发了一种应用于 AlGaAs/GaAs 光电阴极的特殊梯度带隙结构，其中 AlxGa1−xAs 层中的成分等级与 GaAs 层中的掺杂等级相关。实验结果表明，这种独特的结构可以通过金属有机化学气相沉积技术来实现。由于渐变带隙结构产生的内置电场，透射模式和反射模式光电阴极在短波长和长波长区域的量子效率分别显着增加。
To enhance the quantum efficiency over the wavelength region of interest, a special graded band-gap structure applied to the AlGaAs/GaAs photocathodes is developed, in which the compositional grade in the AlxGa1−xAs layer is associated with the doping grade in the GaAs layer. The experimental results show that this unique structure can be achieved by the metalorganic chemical vapor deposition technique. As a result of the built-in electric fields arising from the graded band-gap structure, the quantum efficiency in the short-wavelength and long-wavelength regions is significantly increased for the transmission-mode and reflection-mode photocathodes, respectively.